13.56Mhz Class E Power Amplifier for Plasma Generation

hi, friends...I'm currently working on my Final Year Project to construct a plasma needle and facing problems in construct my RF supply. I'm using MOSFET IRF540N in my circuit as switching device and got some question here:
1) Does this IRF540N actually require Vgs of 15V to on/off it instead of the 2.5V shown in the datasheet?
2) The current instrument available for me only manage to provide a 13.56Mhz, Vpp of 2.5V square wave to my MOSFET, and it is a function generator. Is it possible for me to amplify the signal to Vpp of 15V? what circuit needed to do it?
3) Any gate drive circuit available to provide a Vpp 15V, 13.56Mhz square wave if it is impossible to amplify the signal from function generator?
I'm really in need of your kind help and run out of time, so please help me

Class E is a realistic approach and should work with standard MOSFET as IRF540. There are however special devices dedicated to MHz switching, e.g. from IXYS. Class E doesn't imply "square wave" input, just a certain degree of input overload. At higher frequencies, it's mostly a sine waveform.
10 ns order of magnitude risetimes can be achieved with standard gate drivers. But unfortunately, they won't stand the power dissipation with 13 MHz switching frequency. So you most likely need to assemble the gate driver from discrete components. The design is basically simple: Define the intended rise and fall time, calculate the necessary gate current, select suitable transistors.

dear FvM, thank you so much for the reply.
So is that mean i should replace my MOSFET with IRF540? sorry but i'm totally new and have no idea in circuit design. The circuit I'm using now is just a modified version from a paper i read but I failed to get the desired output and I think gate driving is the main prob.
1) Define the intended rise and fall time>>>the connection i using now is basically the same with this circuit, but the main problem is i don't have any equipment to provide the source for Vg as in SRC5 which is V=polar(10V) with 13.56Mhz frequency.
1) All I got now is a function generator that can provide Vpp of 2.5V and I'm planning to amplify it to 15V, is it possible?
2) There is no suggested gate drive in the paper @.@ So i seriously don't know how does it looks like...
By the way, thanks for your explanation...I was still wonder why the Vpp of 2.5V do well in my simulation but it failed when come to practical = = I knew I'm the kind of really slow in learning, hope you won't mind to keep teaching me, thanks =)

The link is for RF MOSFET:
Manufacture Diodes, IGBTs, LED Driver, Small Signal & Analog, RF Power, SCR, WLAN Power Amplifier, Backlight Inverter, CCFL Inverter, Power Modules, RF Transistors, Power Over Ethernet, PoE, PoE IC
Such as VRF151E, 150W with Gain=14dB @175MHz, 50V. Maybe you can consider microsemi products.

downebd/28_1297149430.jpg
this is the ideal output i want to get, the MOSFET available in this simulation is IRF530N. However, the input from XFG1 is only a 13.56Mhz, 2.5Vp square wave and it works perfectly well. Why it comes to a problem when test in real practice?
downebd/42_1297149430.jpg
btw, i tried to amplify the voltage from the output of function generator and that's what i get. I was manage to amplify it from Vp of 2.5V to 10V now but it's still useless when come to connect the C2 to the gate of MOSFET. Can any1 tell me why it failed?

Without reasonable DC bias, neither 2.5 nor 10Vpp will work. AC coupling without a bias network is a bad idea. With a bias, you should a least get some output. Of cause you have to care, that the DC drain current doesn't cause too much dissipation. Why don't you show the gate waveforms?

Fvm, may I know how can I determine whether it got DC bias or not? sorry if it's a newbie question
here it is:
downebd/47_1297152097.jpg

I would expect an offset voltage set for the generator.

offset voltage? i had never come to know what is the use of it...does it make any difference in real practice? what value should I set?

Check the gate drain current versus gate voltage characteristic of your MOSFET and consider what you're doing.

Alright, I'm not sure is it a good news or bad news. My instructor finally agreed to buy some component for my project, but the budget can not be too high. 2 things i need now are IXYS RF-DEIC420-IC,DRIVER,MOSFET DE275 and IXYS RF DE275-501N16A, if I can only choose one, which one is most needed in my project?
1) Is it possible to generate the plasma by using the DEIC420 to drive the IRF540N MOSFET? i heard that a RF MOSFET like DE275 series is more suitable in generating plasma but the problem is out of budget. The MOSFET is even expensive than the MOSFET driver...any suggestion please? thank you...

Is it possible to generate the plasma by using the DEIC420 to drive the IRF540N MOSFET? I don't remember that you told an intended output power, which would obviously depend on the involved plasma source. So how can we know?

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