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ADS model 的问题

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请问FSL_MRF_ROOT_MODEL与FSL_MRF_MET_MODEL  仿真有什么区别?

MET Models
The MET model for RF High Power transistors and RF ICs is a nonlinear model that simulates
electrical phenomena and accounts for dynamic self-heating. It was specifically developed to model
high power RF transistors and RF ICs used in wireless base station applications. The MET model is
capable of performing small-signal, large-signal, harmonic-balance, and transient simulations.
Because of its ability to simulate self-heating, the MET model enables circuit designers to predict
prototype performance more accurately.
RF High Power product MET models are available for Agilent?s? EEsof? ADS using the RF High
Power Model Kit.
Root Models
The Root model is an Agilent EEsof proprietary model. It is a table-based model and does not
account for self-heating effects. The Root model is available for use in Agilent EEsof ADS only.

这个还真不知道,建议你购买《ADS2008射频电路设计与仿真实例》看看。

我也顶一下这本书,很棒的。

正在学习中,谢谢

root不考虑器件本身的热问题吧

MET是电热模型,met模型是他们自己做的模型,而且也考虑了温度效应,而root模型是和Agilent合作的。 前者可能更接近实际,但是算法收敛度不太好,尤其是LoadPull下 后者可能仿真速度更快,收敛度也很好

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