MOS管饱和区迁移率

   在Vgs不是很大时，迁移率不变
   当Vgs越来越大，迁移率会变小

    为什么呢 是由于晶格散射吗

    为什么呢 是由于晶格散射吗

二级，多级效应

Mobility reduction due to vertical field

    能解释一下吗 谢谢

    can you explain it more clearly ? thanks

   When Vgs-Vt is very hihg, carriers are attracted to interface states and other imperfections at the Si-SiO2 interface due to the high, vertical, electric filed between the gate and the channel. This causes a reduction in carrier mobility

    so the reduction of mobility is the result of scattering, right?

   yes

还有外国友人啊

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