一个工艺上的问题
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各位大神，我们如果电路中使衬底和源电位相等，这个在工艺上是怎么实现的呢?是通过打孔很多吗?
heavy doping + contact
盡量讓 buck OD (with N+ or P+, buck OD 做成guard ring (guard ring should be wide, contact number as many as possible), 防止Vbs (Vth) 飄移, Vbs = 0 ) 接近MOS的 Source (source OD with contact as many as possible). Source & body terminal as near as possible. 盡量讓 bulk OD & source OD 越近越好 以防止 latch up
谢谢，原来这样就可以了啊
这个heavy doping是指衬底要重掺杂是吧~
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